Track formation in SiO2/Si and Si3N4/Si structures

Abstract

In frame of thermal spike model, calculated the parameters of track formation were developed for the agencies of the SiO₂/Si and Si₃N₄/Si irradiated by fast ions. An important and a new result is the estimation of possibility of using the calculated ions to create a nanoporous layers in silicon dioxide and silicon nitride. The method of chemical etching were obtained nanosized pores in the structures of the SiO₂/Si. We investigated the surface morphology of samples SiO₂/Si and parameters formed nanopores. Thus, the tested technique of etching ion tracks by the method of chemical etching.