Development of technology for creating high-voltage p0–n0 junctions based on GaAs

Abstract

An optimal solution has been found to the problem of obtaining p0-n0 junctions based on lightly doped GaAs layers with high values of electrical parameters and specified thicknesses of base layers to create ultra-fast high-voltage pulsed three-electrode switches with a photon injection mechanism of minority charge carriers. A technology has been developed for the formation of high-voltage, powerful subnano-second photonic injection switches based on gallium arsenide and its solid solutions. The dependence of the current rise time, switching voltage and switching stability relative to the control pulse of high-voltage photonic injection switches in a wide current and frequency mode of their operation, its sensitivity to various external influences, as well as dependence on the thickness of the p0-layer, on the transmission coefficient, on breakdown voltage U_probe of the high-voltage p⁰-n⁰ junction. The carried out studies and the obtained results indicate the prospects of using the developed high-voltage pulsed semiconductor devices in picosecond optoelectronics for pumping high-power laser and LED structures.